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| SPICE MODEL: DMN2004DMK DMN2004DMK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * * NEW PRODUCT Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability J D F L K M H BC A SOT-26 Dim A B C D F H J K L M a Min 0.35 1.50 2.70 3/4 3/4 2.90 1.00 0.35 0.10 0 Max 0.50 1.70 3.00 3/4 3/4 3.10 1.30 0.55 0.20 8 Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 3/4 0.013 0.10 Mechanical Data * * * * * * * * Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish 3/4 Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.015 grams (approximate) S2 G2 D1 G1 S1 All Dimensions in mm D2 ESD protected up to 2KV Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3) @ TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25C TA = 85C ID IDM Pd RqJA Tj, TSTG Value 20 8 540 390 1.5 225 556 -65 to +150 Units V V mA A mW C/W C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10mS, Duty Cycle 1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30937 Rev. 2 - 2 1 of 4 www.diodes.com DMN2004DMK a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 20 3/4 3/4 0.5 3/4 200 0.5 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 0.4 0.5 0.7 3/4 3/4 3/4 3/4 3/4 Max 3/4 1 1 1.0 0.55 0.70 0.9 3/4 1.4 150 25 20 Unit V mA mA V W ms V pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250mA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 5. Short duration test pulse used to minimize self-heating effect. 0.9 VGS = 2.2V VGS = 2.0V 1000 900 800 VDS = 10V Pulsed ID, DRAIN CURRENT (A) VGS = 1.8V ID, DRAIN CURRENT (mA) 700 600 500 400 300 200 100 TA = 150 C 0.6 VGS = 1.6V 0.3 VGS = 1.4V TA = 85 C TA = 25 C TA = -55 C VGS = 1.2V 0 0 1 2 3 4 5 0 0.4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.8 1.2 1.6 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 1 1 VDS = 10V ID = 1mA Pulsed VGS(th), GATE THRESHOLD VOLTAGE (V) 0.9 0.8 0.7 VGS = 10V Pulsed TA = 125 C 0.6 0.5 0.4 0.3 0.2 0.1 0 -75 TA = 150 C TA = 85 C TA = -55 C TA = 25 C TA = 0 C TA = -25 C 0.1 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current DS30937 Rev. 2 - 2 2 of 4 www.diodes.com DMN2004DMK 1 1.0 VGS = 5V Pulsed TA = 25C NEW PRODUCT 0.9 0.8 TA = 125 C TA = 150 C TA = 85 C 0.7 0.6 0.5 0.4 0.3 ID = 540mA TA = -55 C TA = 25 C TA = 0 C TA = -25 C 0.2 0.1 0 0.1 0.2 0.4 0.6 0.8 1.0 0 2 4 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0.4 0.6 0.8 1 1.2 VGS = 4.5V Tj = 25C VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage 0.5 0.4 VGS = 1.8V VGS = 4.5V, ID = 540mA 0.3 0.2 VGS = 2.5V VGS = 10V, ID = 280mA 0.1 0 -50 -25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage Tj, JUNCTION TEMPERATURE ( C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1 VGS = 0V 10000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1000 Tj = 150C IDR, REVERSE DRAIN CURRENT (A) TA = 150 C 0.1 TA = 125 C TA = 85 C TA = 25 C 100 Tj = 100C 10 0.01 TA = 0 C TA = -25 C TA = -55 C 1 0.1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage 0.001 0 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltage 1 DS30937 Rev. 2 - 2 3 of 4 www.diodes.com DMN2004DMK |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 VGS = 10V TA = -55 C 120 f = 1MHz VGS = 0V NEW PRODUCT 100 Ciss C, CAPACITANCE (pF) TA = 25 C 80 0.1 TA = 85 C 60 TA = 150 C 40 Coss 20 0.01 1 10 100 1000 Crss 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation Ordering Information Device (Note 6) Packaging SOT-26 Shipping 3000/Tape & Reel DMN2004DMK-7 Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 NAB YM S2 G2 D1 NAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 2006 T March 3 Apr 4 May 5 2007 U Jun 6 Jul 7 Aug 8 2008 V Sep 9 Oct O 2009 W Nov N Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30937 Rev. 2 - 2 4 of 4 www.diodes.com DMN2004DMK |
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